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dmc2020usd document number: ds32121 rev. 4 - 2 1 of 11 www.diodes.com february 2011 ? diodes incorporated dmc2020usd a product line o f diodes incorporated 20v complementary pair enhancement mode mosfet product summary device v (br)dss r ds(on) max i d max t a = 25 c (notes 3 & 5) q1 20v 20m @ v gs = 4.5v 8.5a 28m @ v gs = 2.5v 7.2a q2 -20v 33m @ v gs = -4.5v -6.8a 45m @ v gs = -2.5v -5.8a description and applications this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. ? motor control ? dc-dc converters ? power management functions ? notebook computers and printers features and benefits ? reduced footprint with two discretes in a single so8 ? low gate drive ? low input capacitance ? fast switching speed ? low input/output leakage ? esd protected up to 2kv ? ?lead free?, rohs compliant (note 1) ? halogen and antimony free. "green" device (note 1) mechanical data ? case: so-8 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals connections: see diagram ? terminals: finish - matte tin annealed over copper lead frame. solderable per mil-std-202, method 208 ? weight: 0.074 grams (approximate) ordering information (note 1) product marking reel size (inches) tape width (mm) quantity per reel DMC2020USD-13 c2020ud 13 12 2,500 notes: 1. no purposefully added lead. diodes inc.'s "green" policy and packaging details can be found on our website at http:// www.diodes.com. marking information so-8 top view top view d1 s1 g1 s2 g2 d1 d2 d2 equivalent circuit c2020ud yy ww = manufacturer?s marking c2020ud = product type marking code yyww = date code marking yy = year (ex: 09 = 2009) ww = week (01 - 53) esd protected to 2kv q1 n-channel q2 p-channel source gate drain body diode gate protection diode source gate drain body diode gate protection diode
dmc2020usd document number: ds32121 rev. 4 - 2 2 of 11 www.diodes.com february 2011 ? diodes incorporated dmc2020usd a product line o f diodes incorporated maximum ratings @t a = 25c unless otherwise specified characteristic symbol n-channel - q1 p-channel - q2 units drain-source voltage v dss 20 -20 v gate-source voltage v gss 10 10 continuous drain current v gs = 4.5v (notes 3 & 5) i d 8.5 -6.8 a t a = 70c (notes 3 & 5) 6.8 -5.4 (notes 2 & 5) 6.5 -5.2 (notes 2 & 6) 7.8 -6.3 pulsed drain current v gs = 4.5v (notes 4 & 5) i dm 33.6 -26.8 continuous source current (body diode) (notes 3 & 5) i s 4.0 -4.0 pulsed source current (body diode) (notes 4 & 5) i sm 33.6 -26.8 thermal characteristics @t a = 25c unless otherwise specified characteristic symbol n-channel - q1 p-channel - q2 unit power dissipation linear derating factor (notes 2 & 5) p d 1.25 10 w mw/ c (notes 2 & 6) 1.8 14.3 (notes 3 & 5) 2.14 17.2 thermal resistance, junction to ambient (notes 2 & 5) r ja 100 c/w (notes 2 & 6) 70 (notes 3 & 5) 58 thermal resistance, junction to lead (notes 5 & 7) r jl 51 operating and storage temperature range t j, t stg -55 to +150 c notes: 2. for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still a ir conditions; the device is measured when operating in a steady-state condition. 3. same as note (2), except the device is measured at t 10 sec. 4. same as note (2), except the device is pulsed with d = 0.02 and pulse width 300s. 5. for a dual device with one active die. 6. for a device with two active die running at equal power. 7. thermal resistance from junction to so lder-point (at the end of the drain lead).
dmc2020usd document number: ds32121 rev. 4 - 2 3 of 11 www.diodes.com february 2011 ? diodes incorporated dmc2020usd a product line o f diodes incorporated thermal characteristics 0.1 1 10 10m 100m 1 10 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 100 1m 10m 100m 1 10 100 1k 1 10 100 0.1 1 10 10m 100m 1 10 25 mm x 25 mm 1oz fr4 25 mm x 25 mm 1oz fr4 25 mm x 25 mm 1oz fr4 one active die 100us 100ms 1s r ds(on) limited 1ms n-channel safe operating area single pulse t amb = 25c one active die dc 10ms i d drain current (a) v ds drain-source voltage (v) one active die two active die derating curve max power dissipation (w) temperature (c) d=0.2 d=0.5 d=0.1 transient thermal impedance single pulse d=0.05 thermal resistance (c/w) pulse width (s) single pulse t amb = 25c one active die pulse power dissipation maximum power (w) pulse width (s) single pulse t amb = 25c one active die 1s dc 100ms r ds(on) limited p-channel safe operating area -v ds drain-source voltage (v) -i d drain current (a) 10ms 1ms 100us
dmc2020usd document number: ds32121 rev. 4 - 2 4 of 11 www.diodes.com february 2011 ? diodes incorporated dmc2020usd a product line o f diodes incorporated electrical characteris tics ? q1 n-channel @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics drain-source breakdown voltage bv dss 20 - - v v gs = 0v, i d = 250 a zero gate voltage drain current i dss - - 1.0 a v ds = 20v, v gs = 0v gate-source leakage i gss - - 10 a v gs = 10v, v ds = 0v on characteristics gate threshold voltage v gs ( th ) 0.5 1.1 1.5 v v ds = v gs , i d = 250 a static drain-source on-resistance (note 8) r ds (on) - 13 20 m ? v gs = 4.5v, i d = 7a 18 28 v gs = 2.5v, i d = 3a forward transfer admittance (notes 8 & 9) |y fs | - 16 - s v ds = 5v, i d = 9.4a diode forward voltage (note 8) v sd - 0.7 1.2 v v gs = 0v, i s = 1.3a continuous source current i s - - 1.8 a - dynamic characteristics (note 9) input capacitance c iss - 1149 - pf v ds = 10v, v gs = 0v, f = 1.0mhz output capacitance c oss - 157 - reverse transfer capacitance c rss - 142 - gate resistance r g - 1.51 - ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge (note 10) q g - 6.0 - nc v gs = 2.5v v ds = 10v i d = 9.4a total gate charge (note 10) q g - 11.6 - v gs = 4.5v gate-source charge (note 10) q g s - 2.7 - gate-drain charge (note 10) q g d - 3.4 - turn-on delay time (note 10) t d ( on ) - 11.67 - turn-on rise time (note 10) t r - 12.49 - ns v gs = 4.5v, v ds = 10v, r g = 6 ? , i d = 1a turn-off delay time (note 10) t d ( off ) - 35.89 - turn-off fall time (note 10) t f - 12.33 - notes: 8. measured under pulsed conditions. pulse width 300 s; duty cycle 2% 9. for design aid only, not subject to production testing. 10. switching characteristics are independent of operating junction temperatures. typical characteristics ? q1 n-channel 0 5 10 15 20 25 30 0 0.5 1 1.5 2 fig. 1 typical output characteristics v , drain-source voltage (v) ds i, d r ain c u r r en t (a) d v = 1.8v gs v = 2.0v gs v = 2.5v gs v = 3.0v gs v = 3.5v gs v = 4.0v gs v = 4.5v gs v = 10v gs 0 0.5 1 1.5 2 2.5 3 fig. 2 typical transfer characteristics v , gate source voltage (v) gs 0 5 10 15 20 i, d r ain c u r r en t (a) d v = 5v ds t = -55c a t = 25c a t = 125c a t = 150c a t = 85c a
dmc2020usd document number: ds32121 rev. 4 - 2 5 of 11 www.diodes.com february 2011 ? diodes incorporated dmc2020usd a product line o f diodes incorporated 0 0.01 0.02 0.03 0.04 0 5 10 15 20 25 30 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , drain-source on-resistance ( ) ds(on) v = 4.5v gs v = 2.5v gs 0 5 10 15 20 i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d 0 0.01 0.02 0.03 0.04 r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) v = 4.5v gs t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0.6 0.8 1.0 1.2 1.4 1.6 fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j r , drain-source on-resistance (normalized) ds(on) v = 2.5v i = 5a gs d v = 4.5v i = 10a gs d fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0 0.01 0.02 0.03 0.04 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) v = 4.5v i = 10a gs d v = 2.5v i = 5a gs d 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 1ma d i = 250a d 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig. 8 diode forward voltage vs. current i, s o u r c e c u r r e n t (a) s t = 25c a
dmc2020usd document number: ds32121 rev. 4 - 2 6 of 11 www.diodes.com february 2011 ? diodes incorporated dmc2020usd a product line o f diodes incorporated 10 100 1,000 10,000 04 8121620 fig. 9 typical capacitance v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) f = 1mhz c iss c oss c rss 0 5 10 15 20 fig. 10 typical drain-source leakage current vs. drain-source voltage v , drain-source voltage (v) ds 1 10 100 1,000 100,000 i, d r ai n -s o u r c e leaka g e c u r r e n t (na) dss 10,000 t = 25c a t = 85c a t = 125c a t = 150c a 0 5 10 15 20 25 q , otal gate charge (nc) fig. 11 gate-source voltage vs. total gate charge g t 0 2 4 6 8 10 v, a t e-s o u r c e v o l t a g e(v) gs g v = 10v i = 9.4a ds d
dmc2020usd document number: ds32121 rev. 4 - 2 7 of 11 www.diodes.com february 2011 ? diodes incorporated dmc2020usd a product line o f diodes incorporated electrical characteris tics ? q2 p-channel @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics drain-source breakdown voltage bv dss -20 - - v v gs = 0v, i d = -250 a zero gate voltage drain current i dss - - -1.0 a v ds = -20v, v gs = 0v gate-source leakage i gss - - 10 a v gs = 8v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) -0.4 -0.7 -1.0 v v ds = v gs , i d = -250 a static drain-source on-resistance (note 11) r ds (on) - 26 33 m ? v gs = -4.5v, i d = -6a 33 45 v gs = -2.5v, i d = -3a forward transfer admittance (note 11 & 12) |y fs | - 14 - s v ds = -5v, i d = -4a diode forward voltage (note 11) v sd - -0.7 -1.0 v v gs = 0v, i s = -1a continuous source current i s - - -1.8 a - dynamic characteristics (note 12) input capacitance c iss - 1610 - pf v ds = -10v, v gs = 0v, f = 1.0mhz output capacitance c oss - 157 - reverse transfer capacitance c rss - 145 - gate resistance r g - 9.45 - ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge (note 13) q g - 8.0 - nc v gs = -2.5v v ds = -10v i d = -4a total gate charge (note 13) q g - 15.4 - v gs = -4.5v gate-source charge (note 13) q g s - 2.5 - gate-drain charge (note 13) q g d - 3.3 - turn-on delay time (note 13) t d ( on ) - 16.8 - ns v gs = -4.5v, v ds = -10v, r g = 6 ? , i d = -1a turn-on rise time (note 13) t r - 12.4 - turn-off delay time (note 13) t d ( off ) - 94.1 - turn-off fall time (note 13) t f - 42.4 - notes: 11. measured under pulsed conditions. pulse width 300 s; duty cycle 2% 12. for design aid only, not subject to production testing. 13. switching characteristics are independent of operating junction temperatures. typical characteristics ? q2 p-channel 0 0.5 1.0 1.5 2.0 fig. 12 typical output characteristics -v , drain-source voltage (v) ds 0 5 10 15 30 -i , d r ai n c u r r e n t (a) d 20 25 v = -1.8v gs v = -2.0v gs v = -2.5v gs v = -3.0v gs v = -3.5v gs v = -4.0v gs v = -4.5v gs v = -10v gs 0 5 10 15 20 -i , d r ai n c u r r e n t (a) d 0 0.5 1 1.5 2 2.5 3 fig. 13 typical transfer characteristics -v , gate source voltage (v) gs v = -5v ds t = -55c a t = 25c a t = 125c a t = 150c a t = 85c a
dmc2020usd document number: ds32121 rev. 4 - 2 8 of 11 www.diodes.com february 2011 ? diodes incorporated dmc2020usd a product line o f diodes incorporated 0 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 fig. 14 typical on-resistance vs. drain current and gate voltage -i , drain-source current (a) d r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) -v = 2.5v gs -v = 4.5v gs 0 5 10 15 20 -i , drain current (a) fig. 15 typical drain-source on-resistance vs. drain current and temperature d 0 0.01 0.02 0.03 0.04 0.05 0.06 r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) v = 4.5v gs t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a fig. 16 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0.6 0.8 1.0 1.2 1.4 1.6 r , d r ain-s o u r c e on-resistance (normalized) ds(on) -v = 4.5v -i = 10a gs d -v = 2.5v -i = 5a gs d fig. 17 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0 0.01 0.02 0.03 0.04 0.05 0.06 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) -v = 4.5v -i = 10a gs d -v = 2.5v -i = 5a gs d fig. 18 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0 0.2 0.4 0.6 0.8 1.0 1. 2 v, g a t e t h r es h o ld v o l t a g e (v) gs(th) -i = 1ma d -i = 250a d 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1.0 1.2 -v , source-drain voltage (v) sd fig. 19 diode forward voltage vs. current -i , s o u r c e c u r r en t (a) s t = 25c a
dmc2020usd document number: ds32121 rev. 4 - 2 9 of 11 www.diodes.com february 2011 ? diodes incorporated dmc2020usd a product line o f diodes incorporated 10 100 1,000 10,000 04 8121620 fig. 20 typical capacitance -v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) f = 1mhz c iss c oss c rss 0 5 10 15 20 fig. 21 typical drain-source leakage current vs. drain-source voltage -v , drain-source voltage (v) ds 1 10 100 1,000 100,000 -i , d r ain-s o u r c e leaka g e c u r r en t (na) dss 10,000 t = 25c a t = 85c a t = 125c a t = 150c a 0 2 4 6 8 10 0 5 10 15 20 25 30 35 q , otal gate charge (nc) fig. 22 gate-source voltage vs. total gate charge g t -v , ate-source voltage (v) gs g v = -10v i = -4a ds d
dmc2020usd document number: ds32121 rev. 4 - 2 10 of 11 www.diodes.com february 2011 ? diodes incorporated dmc2020usd a product line o f diodes incorporated package outline dimensions dim inches millimeters dim inches millimeters min. max. min. max. min. max. min. max. a 0.053 0.069 1.35 1.75 e 0.050 bsc 1.27 bsc a1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 d 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 h 0.228 0.244 5.80 6.20 0 8 0 8 e 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 l 0.016 0.050 0.40 1.27 - - - - - suggested pad layout h x 45 1.52 0.060 7.0 0.275 0.6 0 .024 1.27 0.050 4.0 0.155 mm inches
dmc2020usd document number: ds32121 rev. 4 - 2 11 of 11 www.diodes.com february 2011 ? diodes incorporated dmc2020usd a product line o f diodes incorporated important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com

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